Localized excitonic transitions in a ZnSe-Zn0.75Cd0.25Se double-superlattice grown by molecular beam epitaxy

A group of well-defined exciton transitions from the localized states were observed in ZnSe-Zn0.75Cd0.25Se double-superlattice structure. The photoluminescence and photoreflectance have been employed to study the subband transitions at low temperatures. At 1.4 K, except the two ground states and two...

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Published in:Applied physics letters 1998-04, Vol.72 (14), p.1688-1690
Main Authors: Guan, Z. P., Kuang, G. K., Griebl, E., Kastner, M., Gebhardt, W.
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description A group of well-defined exciton transitions from the localized states were observed in ZnSe-Zn0.75Cd0.25Se double-superlattice structure. The photoluminescence and photoreflectance have been employed to study the subband transitions at low temperatures. At 1.4 K, except the two ground states and two higher subbands of n=1 light-hole and n=2 heavy-hole excitonic transitions, other four peaks (A, B, C, and D) also were observed in wider-well superlattice. Those peaks were attributed to the excitonic transitions from n=2 heavy-hole subband due to the fluctuation of well-barrier interface. Another localized excitonic transition from narrower-well superlattice appeared as increasing the modulated intensity in photoreflectance spectra.
doi_str_mv 10.1063/1.121153
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title Localized excitonic transitions in a ZnSe-Zn0.75Cd0.25Se double-superlattice grown by molecular beam epitaxy
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