The Schottky energy barrier dependence of charge injection in organic light-emitting diodes

We present device model calculations of the current–voltage (I–V) characteristics of organic diodes and compare them with measurements of structures fabricated using MEH-PPV. The structures are designed so that all of the current is injected from one contact. The I–V characteristics are considered a...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 1998-04, Vol.72 (15), p.1863-1865
Main Authors: Campbell, I. H., Davids, P. S., Smith, D. L., Barashkov, N. N., Ferraris, J. P.
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We present device model calculations of the current–voltage (I–V) characteristics of organic diodes and compare them with measurements of structures fabricated using MEH-PPV. The structures are designed so that all of the current is injected from one contact. The I–V characteristics are considered as a function of the Schottky energy barrier to charge injection from the contact. Experimentally, the Schottky barrier is varied from essentially zero to more than 1 eV by using different metal contacts. A consistent description of the device I–V characteristics is obtained as the Schottky barrier is varied from small values, less than about 0.4 eV, where the current flow is space-charge limited to larger values where it is contact limited.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.121208