Minority carrier diffusion length and lifetime in GaN

Electron beam induced current measurements on planar Schottky diodes on undoped GaN grown by metalorganic chemical vapor deposition are reported. The minority carrier diffusion length of 0.28 μm has been measured, indicating minority carrier lifetime of 6.5 ns. The tapping mode atomic force microsco...

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Bibliographic Details
Published in:Applied physics letters 1998-06, Vol.72 (24), p.3166-3168
Main Authors: Bandić, Z. Z., Bridger, P. M., Piquette, E. C., McGill, T. C.
Format: Article
Language:English
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Summary:Electron beam induced current measurements on planar Schottky diodes on undoped GaN grown by metalorganic chemical vapor deposition are reported. The minority carrier diffusion length of 0.28 μm has been measured, indicating minority carrier lifetime of 6.5 ns. The tapping mode atomic force microscopy imaging of the surfaces and scanning electron microscopy of the cross sections have been used to characterize the linear dislocations and columnar structure of the GaN. The possible influence of recombination on the extended defects in GaN on the minority carrier diffusion length and lifetime is discussed, and contrasted to other recombination mechanisms.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.121581