Valence and atomic size dependent exchange barriers in vacancy-mediated dopant diffusion

First-principles pseudopotential calculations of dopant-vacancy exchange barriers indicate a strong dependency on dopant valence and atomic size, in contrast to current models of vacancy-mediated dopant diffusion. First-row elements (B, C, N) are found to have exchange barriers which are an order of...

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Bibliographic Details
Published in:Applied physics letters 1998-07, Vol.73 (2), p.247-249
Main Authors: Nelson, J. S., Schultz, P. A., Wright, A. F.
Format: Article
Language:English
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Summary:First-principles pseudopotential calculations of dopant-vacancy exchange barriers indicate a strong dependency on dopant valence and atomic size, in contrast to current models of vacancy-mediated dopant diffusion. First-row elements (B, C, N) are found to have exchange barriers which are an order of magnitude larger than the assumed value of 0.3 eV (the Si vacancy migration energy).
ISSN:0003-6951
1077-3118
DOI:10.1063/1.121779