Uniaxial magnetic anisotropy of submicron MnAs ferromagnets in GaAs semiconductors

Submicron (100–500 nm) room-temperature ferromagnets of MnAs have been successfully incorporated into GaAs semiconductor substrates by Mn+ ion implantation and subsequent heat treatment at 920 °C for 1 s in a nitrogen gas. Atomic force microscopy indicates an epitaxial relation of [0001] oriented he...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 1998-07, Vol.73 (3), p.387-389
Main Authors: Ando, K., Chiba, A., Tanoue, H.
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Submicron (100–500 nm) room-temperature ferromagnets of MnAs have been successfully incorporated into GaAs semiconductor substrates by Mn+ ion implantation and subsequent heat treatment at 920 °C for 1 s in a nitrogen gas. Atomic force microscopy indicates an epitaxial relation of [0001] oriented hexagonal MnAs crystallites on (001) GaAs substrates: [11 2̄0]MnAs∥[110]GaAs. A stronger shape anisotropy along [110]GaAs is observed for the smaller crystallites. Magnetic characterizations by superconducting quantum interference device reveal uniaxial in-plane magnetic anisotropy of the sample. Magnetic force microscopy imaging shows that the uniaxial magnetic anisotropy comes from the alignment of magnetic dipoles along the magnetic easy [11 2̄0] axis of MnAs, which is parallel to [110]GaAs.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.121843