Microstructure of GaN laterally overgrown by metalorganic chemical vapor deposition

Extended defect reduction in GaN grown by lateral epitaxial overgrowth (LEO) on large-area SiO2/GaN/Al2O3 wafers by low pressure metalorganic chemical vapor deposition is characterized using transmission electron microscopy and atomic force microscopy. The laterally overgrown GaN (LEO GaN) has a rec...

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Bibliographic Details
Published in:Applied physics letters 1998-08, Vol.73 (6), p.747-749
Main Authors: Marchand, H., Wu, X. H., Ibbetson, J. P., Fini, P. T., Kozodoy, P., Keller, S., Speck, J. S., DenBaars, S. P., Mishra, U. K.
Format: Article
Language:English
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Summary:Extended defect reduction in GaN grown by lateral epitaxial overgrowth (LEO) on large-area SiO2/GaN/Al2O3 wafers by low pressure metalorganic chemical vapor deposition is characterized using transmission electron microscopy and atomic force microscopy. The laterally overgrown GaN (LEO GaN) has a rectangular cross section with smooth (0001) and {112̄0} facets. The density of mixed-character and pure edge threading dislocations in the LEO GaN (
ISSN:0003-6951
1077-3118
DOI:10.1063/1.121988