GaN heteroepitaxial growth on silicon nitride buffer layers formed on Si (111) surfaces by plasma-assisted molecular beam epitaxy

• Published in: Applied physics letters 1998-08, Vol.73 (6), p.827-829
• Main Authors: Nakada, Yoshinobu, Aksenov, Igor, Okumura, Hajime
• Format: Article
• Language: English
• ISSN: 0003-6951; 1077-3118
• DOI: 10.1063/1.122014

Wurtzite GaN films were grown on silicon nitride buffer layers formed on Si (111) substrates by radio frequency plasma-assisted molecular beam epitaxy. Reflection high energy electron diffraction, Auger electron spectroscopy, transmission electron microscopy, and photoluminescence results indicate that the single crystalline wurtzite GaN was grown on the buffer layers of amorphouslike silicon nitride formed on Si (111) substrates by taking the following relationship with the substrate: GaN [0001]//Si [111] and GaN (1̄1̄20)//Si (11̄0). Both faces of the silicon nitride buffer layer were found to be flat and sharp, the thickness of the buffer layer (1–1.5 nm) being constant across the interface. Efficient bound exciton emission was observed at 3.46 eV. The growth technique described was found to be simple but very powerful for growing high quality GaN films on Si substrates.