Reentrant metal–insulator-type transition induced by high fluence chromium ion implantation of La0.7Ca0.3MnO3 thin films

Thin films of colossal magnetoresistance (MR) material La0.7Ca0.3MnO3 were implanted with 200 keV Cr ions over a range of fluence from 1×1013 to 5×1015 ions/cm2. Resistance measurements were made in zero and applied magnetic fields of up to 8 T. At fluences of 1×1014 and 5×1014 Cr+/cm2, the resistan...

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Bibliographic Details
Published in:Applied physics letters 1998-08, Vol.73 (7), p.1005-1007
Main Authors: Cohen, L. F., de Silva, P. S. I. P. N., Malde, N., Akther Hossain, A. K. M., Thomas, K. A., Chater, R., MacManus-Driscoll, J. D., Tate, T., Mathur, N. D., Blamire, M. G., Evetts, J. E.
Format: Article
Language:English
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Summary:Thin films of colossal magnetoresistance (MR) material La0.7Ca0.3MnO3 were implanted with 200 keV Cr ions over a range of fluence from 1×1013 to 5×1015 ions/cm2. Resistance measurements were made in zero and applied magnetic fields of up to 8 T. At fluences of 1×1014 and 5×1014 Cr+/cm2, the resistance was much greater than in the unimplanted material and the metal–insulator transition temperature was suppressed to values below 20 K. For the highest fluence (5×1015 ions/cm2), a reentrant metal–insulator-type transition was observed and the resistance dropped significantly. Furthermore, improvement in the low-field MR was observed between the virgin and high fluence implanted films for fields less than 500 mT. These results are interpreted in terms of changes in magnetic properties with depth, defect creation, and the influence of oxygen deficiency.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.122067