Determination of frontier orbital alignment and band bending at an organic semiconductor heterointerface by combined x-ray and ultraviolet photoemission measurements

The alignment of the highest occupied molecular orbitals (HOMO) at the tris (8-hydroxy quinoline) aluminum (Alq3)/N,N′-di-(3-methylphenyl)-N,N′diphenyl-4,4′-diaminobiphenyl (TPD) heterojunction, used in organic light-emitting diodes (OLED), was determined by growing a TPD layer in several steps on a...

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Published in:Applied physics letters 1998-08, Vol.73 (8), p.1026-1028
Main Authors: Schlaf, R., Parkinson, B. A., Lee, P. A., Nebesny, K. W., Armstrong, N. R.
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Language:English
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container_end_page 1028
container_issue 8
container_start_page 1026
container_title Applied physics letters
container_volume 73
creator Schlaf, R.
Parkinson, B. A.
Lee, P. A.
Nebesny, K. W.
Armstrong, N. R.
description The alignment of the highest occupied molecular orbitals (HOMO) at the tris (8-hydroxy quinoline) aluminum (Alq3)/N,N′-di-(3-methylphenyl)-N,N′diphenyl-4,4′-diaminobiphenyl (TPD) heterojunction, used in organic light-emitting diodes (OLED), was determined by growing a TPD layer in several steps on a thick Alq3 substrate layer. After each growth step the sample was characterized in situ by x-ray and ultraviolet photoemission spectroscopy. The offset of the HOMO maxima at the interface was determined to be −0.13 eV from Alq3 to TPD. By including the known HOMO–lowest occupied molecular orbital (LUMO) gaps for both molecules into the evaluation, the offset of the LUMO minima was determined to be −0.33 eV from Alq3 to TPD. These values are consistent with previous assumptions that this interface represents a higher barrier for electron injection from Alq3 to TPD than for hole injection from TPD to Alq3.
doi_str_mv 10.1063/1.122073
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title Determination of frontier orbital alignment and band bending at an organic semiconductor heterointerface by combined x-ray and ultraviolet photoemission measurements
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