Impact ionization in AlxGa1−xAs/GaAs superlattices

The role of band discontinuities on electron ionization rates is examined for the case of GaAs/AlGaAs superlattice avalanche photodiode structures. Our results show that the energy discontinuity experienced by a hot electron (E>0.4 eV above the Fermi level) is small or even negative relative to t...

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Bibliographic Details
Published in:Applied physics letters 1998-08, Vol.73 (9), p.1227-1229
Main Author: Pearsall, T. P.
Format: Article
Language:English
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Summary:The role of band discontinuities on electron ionization rates is examined for the case of GaAs/AlGaAs superlattice avalanche photodiode structures. Our results show that the energy discontinuity experienced by a hot electron (E>0.4 eV above the Fermi level) is small or even negative relative to the conduction-band energy discontinuity experienced by an electron at the band edge of the Γ valley in GaAs/AlGaAs heterostructures. This finding does not support the measurement of an enhanced electron ionization rate due to transport through a superlattice composed of this materials system.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.122135