Effect of fluorine on the diffusion of boron in ion implanted Si

Ion implants of 1 keV B+11 and 5 keV BF2+, to a dose of 1×1015/cm2 at a tilt angle of 0°, were implanted into preamorphized (Si+,70 keV, 1×1015/cm2) wafers. These samples were rapid thermal annealed in an ambient of 33 ppm of oxygen in N2 at very short times (

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Bibliographic Details
Published in:Applied physics letters 1998-08, Vol.73 (9), p.1263-1265
Main Authors: Downey, Daniel F., Chow, Judy W., Ishida, Emi, Jones, Kevin S.
Format: Article
Language:English
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Description
Summary:Ion implants of 1 keV B+11 and 5 keV BF2+, to a dose of 1×1015/cm2 at a tilt angle of 0°, were implanted into preamorphized (Si+,70 keV, 1×1015/cm2) wafers. These samples were rapid thermal annealed in an ambient of 33 ppm of oxygen in N2 at very short times (
ISSN:0003-6951
1077-3118
DOI:10.1063/1.122146