An analysis of temperature dependent photoluminescence line shapes in InGaN

Photoluminescence (PL) line shapes in InGaN multiple quantum well structures have been studied experimentally and theoretically between 10 and 300 K. The higher temperature PL spectra can be fitted quantitatively with a thermalized carrier distribution and a broadened joint-density-of-states. The lo...

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Bibliographic Details
Published in:Applied physics letters 1998-09, Vol.73 (12), p.1697-1699
Main Authors: Teo, K. L., Colton, J. S., Yu, P. Y., Weber, E. R., Li, M. F., Liu, W., Uchida, K., Tokunaga, H., Akutsu, N., Matsumoto, K.
Format: Article
Language:English
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Summary:Photoluminescence (PL) line shapes in InGaN multiple quantum well structures have been studied experimentally and theoretically between 10 and 300 K. The higher temperature PL spectra can be fitted quantitatively with a thermalized carrier distribution and a broadened joint-density-of-states. The low temperature PL line shapes suggest that carriers are not thermalized, as a result of localization by band-gap fluctuations. We deduce a localization energy of ∼7 meV as compared with an activation energy of ∼63 meV from thermal quenching of the PL intensity. We thus conclude that this activation energy and the band-gap fluctuation most likely have different origins.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.122249