Resistive and structural properties of La1.85Sr0.15Cu1−yZnyO4 films

Single-phase c-axis aligned La1.85Sr0.15Cu1−yZnyO4 films were grown by pulsed laser deposition with Zn contents up to a value of y of 0.12. The film properties indicate the existence of defects, in addition to the Zn impurities, that are unintentionally introduced during the film growth. These defec...

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Bibliographic Details
Published in:Applied physics letters 1998-11, Vol.73 (19), p.2823-2825
Main Authors: Cieplak, Marta Z., Karpińska, K., Domagała, J., Dynowska, E., Berkowski, M., Malinowski, A., Guha, S., Croft, M., Lindenfeld, P.
Format: Article
Language:English
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Summary:Single-phase c-axis aligned La1.85Sr0.15Cu1−yZnyO4 films were grown by pulsed laser deposition with Zn contents up to a value of y of 0.12. The film properties indicate the existence of defects, in addition to the Zn impurities, that are unintentionally introduced during the film growth. These defects are probably oxygen vacancies, and have a distinctly different effect on Tc from the Zn. The separation of the two effects resolves earlier ambiguities in the observed rates of Tc depression.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.122602