Determination of the concentration and temperature dependence of the fundamental energy gap in AlxIn1−xSb

We use transmission spectroscopy to determine the energy gap for the AlxIn1−xSb alloy system in the Al concentration range from 0% to 25% from cryogenic to room temperature. The samples are epitaxial layers grown by molecular beam epitaxy on GaAs substrates. Our room temperature results are compared...

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Bibliographic Details
Published in:Applied physics letters 1998-11, Vol.73 (21), p.3132-3134
Main Authors: Dai, N., Brown, F., Doezema, R. E., Chung, S. J., Goldammer, K. J., Santos, M. B.
Format: Article
Language:English
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Summary:We use transmission spectroscopy to determine the energy gap for the AlxIn1−xSb alloy system in the Al concentration range from 0% to 25% from cryogenic to room temperature. The samples are epitaxial layers grown by molecular beam epitaxy on GaAs substrates. Our room temperature results are compared to those from two earlier studies. In our Al concentration range, we find a linear change of energy gap with alloy lattice constant.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.122696