Effect of well number on organic multiple-quantum-well electroluminescent device characteristics

A doping technique for fabricating organic multiple-quantum-well electroluminescent (EL) devices is demonstrated. This device consists of N,N′-Bis(3-methyphenyl)-N,N′-diphenylbenzidine used as a hole transporter, undoped tris(8-quinolinolato) aluminum (Alq) as a barrier potential or electron transpo...

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Bibliographic Details
Published in:Applied physics letters 1998-12, Vol.73 (23), p.3348-3350
Main Authors: Huang, Jingsong, Yang, Kaixia, Xie, Zhiyuan, Chen, Baijun, Jiang, Hongjin, Liu, Shiyong
Format: Article
Language:English
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Summary:A doping technique for fabricating organic multiple-quantum-well electroluminescent (EL) devices is demonstrated. This device consists of N,N′-Bis(3-methyphenyl)-N,N′-diphenylbenzidine used as a hole transporter, undoped tris(8-quinolinolato) aluminum (Alq) as a barrier potential or electron transporter, and Alq doped with 5,6,11,12-tetraphenylnaphthacene as a potential well and an emitter. Our experimental results suggest that the double-quantum-well EL devices show the optimum emission characteristics. The efficiency and the luminance of the device achieve 15.7 lm/W and 7500 cd/m2, respectively.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.122765