Effect of temperature on Ga2O3(Gd2O3)/GaN metal–oxide–semiconductor field-effect transistors

Ga 2 O 3 (Gd 2 O 3 ) was deposited on GaN for use as a gate dielectric in order to fabricate a depletion metal–oxide–semiconductor field-effect transistor (MOSFET). Analysis of the effect of temperature on the device shows that gate leakage is significantly reduced at elevated temperature relative t...

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Bibliographic Details
Published in:Applied physics letters 1998-12, Vol.73 (26), p.3893-3895
Main Authors: Ren, F., Hong, M., Chu, S. N. G., Marcus, M. A., Schurman, M. J., Baca, A., Pearton, S. J., Abernathy, C. R.
Format: Article
Language:English
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Summary:Ga 2 O 3 (Gd 2 O 3 ) was deposited on GaN for use as a gate dielectric in order to fabricate a depletion metal–oxide–semiconductor field-effect transistor (MOSFET). Analysis of the effect of temperature on the device shows that gate leakage is significantly reduced at elevated temperature relative to a conventional metal–semiconductor field-effect transistor fabricated on the same GaN layer. MOSFET device operation in fact improved upon heating to 400 °C. Modeling of the effect of temperature on contact resistance suggests that the improvement is due to a reduction in the parasitic resistances present in the device.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.122927