Stripe-width dependence of threshold current for gain-guided AlGaInN laser diodes

The threshold current density of narrow-stripe gain-guided nitride laser diodes increases very rapidly as the stripe width is made narrow. To examine this behavior, waveguide simulations, incorporating the complex refractive indices associated with optical gain, have been used to analyze the lateral...

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Bibliographic Details
Published in:Applied physics letters 1999-01, Vol.74 (3), p.404-406
Main Authors: Bour, D. P., Kneissl, M., Romano, L. T., Donaldson, R. M., Dunnrowicz, C. J., Johnson, N. M., Evans, G. A.
Format: Article
Language:English
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Summary:The threshold current density of narrow-stripe gain-guided nitride laser diodes increases very rapidly as the stripe width is made narrow. To examine this behavior, waveguide simulations, incorporating the complex refractive indices associated with optical gain, have been used to analyze the lateral optical modes of gain-guided laser diodes. Threshold current was then determined from the gain–current relationship of our laser material, which was obtained experimentally. These evaluations reveal that gain guiding, coupled with a carrier-induced index depression, offer a reasonable explanation for the rapid increase in threshold when the stripe width becomes less than 5 μm.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.123084