Femtosecond near-field optical spectroscopy of implantation patterned semiconductors

We have developed a femtosecond-resolved near-field scanning optical microscope, using a diffraction-limited pump and near-field probe configuration, which allows us to measure carrier dynamics with a spatial resolution of ∼150 nm and a time resolution of ∼250 fs. This instrument is used for near-fi...

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Bibliographic Details
Published in:Applied physics letters 1999-01, Vol.74 (1), p.61-63
Main Authors: Nechay, B. A., Siegner, U., Morier-Genoud, F., Schertel, A., Keller, U.
Format: Article
Language:English
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Summary:We have developed a femtosecond-resolved near-field scanning optical microscope, using a diffraction-limited pump and near-field probe configuration, which allows us to measure carrier dynamics with a spatial resolution of ∼150 nm and a time resolution of ∼250 fs. This instrument is used for near-field degenerate pump–probe studies of carrier dynamics in GaAs/AlGaAs single quantum well samples locally patterned by focused-ion-beam (FIB) implantation. We find that lateral carrier diffusion across the nanometer-scale FIB pattern plays a significant role in the decay of the excited carriers.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.123133