Spontaneous self-embedding of three-dimensional SiGe islands

It is shown that, under appropriate conditions, high-Ge-concentration coherent three-dimensional SiGe islands grown on Si(100) self-embed in a matrix of a low-Ge-concentration alloy. The process may be more generally useful for preserving the shape of self-assembled “quantum dot” islands during embe...

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Bibliographic Details
Published in:Applied physics letters 1999-01, Vol.74 (4), p.567-569
Main Authors: Mateeva, E., Sutter, P., Lagally, M. G.
Format: Article
Language:English
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Summary:It is shown that, under appropriate conditions, high-Ge-concentration coherent three-dimensional SiGe islands grown on Si(100) self-embed in a matrix of a low-Ge-concentration alloy. The process may be more generally useful for preserving the shape of self-assembled “quantum dot” islands during embedding in a matrix material.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.123147