Optical characterization of the “E2” deep level in GaN

The correspondence between the E2 level (∼Ec−0.55 eV) in n-type GaN undergoing thermoionization and photoionization was established. The optical cross section in the vicinity of the threshold for photoionization of this level was measured by means of capacitance transient spectroscopy. Analysis usin...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 1999-01, Vol.74 (4), p.543-545
Main Authors: Hacke, P., Ramvall, P., Tanaka, S., Aoyagi, Y., Kuramata, A., Horino, K., Munekata, H.
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The correspondence between the E2 level (∼Ec−0.55 eV) in n-type GaN undergoing thermoionization and photoionization was established. The optical cross section in the vicinity of the threshold for photoionization of this level was measured by means of capacitance transient spectroscopy. Analysis using the formulation of Chantre yielded the optical activation energy, Eo=0.85 eV, and the Franck–Condon parameter, dFC=0.30 eV at 90 K.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.123180