Observation of growth modes during metal-organic chemical vapor deposition of GaN

We present real-time surface x-ray scattering measurements during homoepitaxial growth of GaN by metal-organic chemical vapor deposition. We observed intensity oscillations corresponding to the completion of each monolayer during layer-by-layer growth. The growth rate was found to be temperature ind...

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Bibliographic Details
Published in:Applied physics letters 1999-05, Vol.74 (22), p.3326-3328
Main Authors: Stephenson, G. B., Eastman, J. A., Thompson, C., Auciello, O., Thompson, L. J., Munkholm, A., Fini, P., DenBaars, S. P., Speck, J. S.
Format: Article
Language:English
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Summary:We present real-time surface x-ray scattering measurements during homoepitaxial growth of GaN by metal-organic chemical vapor deposition. We observed intensity oscillations corresponding to the completion of each monolayer during layer-by-layer growth. The growth rate was found to be temperature independent and Ga-transport limited. Transitions between step-flow, layer-by-layer, and three-dimensional growth modes were determined as a function of temperature and growth rate.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.123333