Spatially resolved dopant profiling of patterned Si wafers by bias-applied phase-imaging tapping-mode atomic force microscopy

Tapping-mode atomic force microscopy was used to spatially resolve areas of different doping types on Si wafers patterned by photolithography and subsequent ion implantation. Application of a direct current dc bias between cantilever and sample during measurement induced a change in the tapping-mode...

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Bibliographic Details
Published in:Applied physics letters 1999-03, Vol.74 (10), p.1421-1423
Main Authors: Nelson, M. W., Schroeder, P. G., Schlaf, R., Parkinson, B. A., Almgren, C. W., Erickson, A. N.
Format: Article
Language:English
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Summary:Tapping-mode atomic force microscopy was used to spatially resolve areas of different doping types on Si wafers patterned by photolithography and subsequent ion implantation. Application of a direct current dc bias between cantilever and sample during measurement induced a change in the tapping-mode phase contrast depending on the dopant type of the scanned sample area. This allowed the direct identification of areas of different doping types. Additional measurements on Au samples demonstrate a direct correlation between bias-induced Coulomb force and resulting phase change allowing the conclusion that the observed phase contrast results from dc bias-induced band bending changes.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.123569