Time-resolved microwave technique for ultrafast charge-carrier recombination time measurements in diamonds and GaAs

Recombination times of laser-excited charge carriers in natural diamond crystals, polycrystalline chemical vapor deposited (CVD) diamond films, and GaAs wafers were measured with 1 ns time resolution by a microwave-radiation technique. A waveguide scheme was applied to record time-dependent reflecti...

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Published in:Applied physics letters 1999-03, Vol.74 (12), p.1731-1733
Main Authors: Garnov, S. V., Ritus, A. I., Klimentov, S. M., Pimenov, S. M., Konov, V. I., Gloor, S., Lüthy, W., Weber, H. P.
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cited_by cdi_FETCH-LOGICAL-c225t-32215b192fac06f56e0bfb37b354295f12d405ccbc9f3dbbdc9d745d98429e763
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container_end_page 1733
container_issue 12
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container_title Applied physics letters
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creator Garnov, S. V.
Ritus, A. I.
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description Recombination times of laser-excited charge carriers in natural diamond crystals, polycrystalline chemical vapor deposited (CVD) diamond films, and GaAs wafers were measured with 1 ns time resolution by a microwave-radiation technique. A waveguide scheme was applied to record time-dependent reflection and transmission of 140 GHz cw radiation. The measured recombination carrier lifetimes in the bulk of natural and CVD diamond samples were found to be of 1–3 ns. In GaAs, a distinguishing difference between the bulk (15 ns) and surface (3.5 ns) recombination times was observed. To validate the applicability of the developed technique, a computer simulation of the microwave-radiation interaction with excited plane–parallel specimens has been performed applying the Fabry–Perot resonator theory and the classical Drude model.
doi_str_mv 10.1063/1.123670
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title Time-resolved microwave technique for ultrafast charge-carrier recombination time measurements in diamonds and GaAs
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