A model of radiative recombination in n -type porous silicon–aluminum Schottky junction

It is common knowledge that silicon emits visible light in its breakdown condition, but it is also known to have low efficiency. In this letter, we report an in-depth analysis of data for light emitting devices based on porous silicon. A theoretical model of luminescence from reverse biased p-n junc...

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Bibliographic Details
Published in:Applied physics letters 1999-04, Vol.74 (14), p.1960-1962
Main Authors: Balucani, M., Bondarenko, V., Franchina, L., Lamedica, G., Yakovtseva, V. A., Ferrari, A.
Format: Article
Language:English
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Summary:It is common knowledge that silicon emits visible light in its breakdown condition, but it is also known to have low efficiency. In this letter, we report an in-depth analysis of data for light emitting devices based on porous silicon. A theoretical model of luminescence from reverse biased p-n junction has been developed for this n-type porous silicon–aluminium Schottky junction to explain the higher efficiency of these electroluminescence devices in comparison with that from a reverse biased p-n junction structure. Through this model, it is possible to understand the steps that are necessary to improve the efficiency of porous-aluminum Schottky junction.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.123741