Simulation and characterization of the selective area growth process

A simple three-dimensional vapor phase model is used to interpret and clarify the selective area growth process. The model predicts both normal and anomalous profiles of thickness and composition, including long range effects. These are verified by an extensive set of experiments.

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Bibliographic Details
Published in:Applied physics letters 1999-05, Vol.74 (18), p.2617-2619
Main Authors: Alam, M. A., People, R., Isaacs, E., Kim, C. Y., Evans-Lutterodt, K., Siegrist, T., Pernell, T. L., Vandenberg, J., Sputz, S. K., Chu, S. N. G., Lang, D. V., Smith, L., Hybertsen, M. S.
Format: Article
Language:English
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Summary:A simple three-dimensional vapor phase model is used to interpret and clarify the selective area growth process. The model predicts both normal and anomalous profiles of thickness and composition, including long range effects. These are verified by an extensive set of experiments.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.123915