The effect of bottom electrode on the performance of thin film based capacitors in the gigahertz region

Capacitors in metal–insulator–metal structure have been fabricated with different bottom electrodes. It has been found that the observed losses are enormous at gigahertz frequencies unless due care is taken not only for the conductivity of the bottom electrode but also its thickness. Very thin botto...

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Bibliographic Details
Published in:Applied physics letters 1999-06, Vol.74 (23), p.3546-3548
Main Authors: Dube, D. C., Baborowski, J., Muralt, P., Setter, N.
Format: Article
Language:English
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Summary:Capacitors in metal–insulator–metal structure have been fabricated with different bottom electrodes. It has been found that the observed losses are enormous at gigahertz frequencies unless due care is taken not only for the conductivity of the bottom electrode but also its thickness. Very thin bottom electrodes (thickness ∼100 nm) modify the dielectric response substantially and major loss contributions arise from the substrate, the electrode resistance, and the contacts. A simple approach is suggested to model and experimentally evaluate the electrode resistance.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.124156