Applications of an In0.53Ga0.25Al0.22As/InP continuous-conduction-band structure for ultralow current operation transistors

Based on the compositional dependence on the conduction band discontinuity, a significant heterojunction bipolar transistor (HBT) with a continuous conduction band heterointerface between the InP emitter and the In0.53Ga0.25Al0.22As base is fabricated. Experimentally, due to the elimination of the p...

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Bibliographic Details
Published in:Applied physics letters 1999-07, Vol.75 (4), p.572-574
Main Authors: Liu, Wen-Chau, Pan, Hsi-Jen, Cheng, Shiou-Ying, Wang, Wei-Chou, Chen, Jing-Yuh, Feng, Shun-Ching, Yu, Kuo-Hui
Format: Article
Language:English
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Summary:Based on the compositional dependence on the conduction band discontinuity, a significant heterojunction bipolar transistor (HBT) with a continuous conduction band heterointerface between the InP emitter and the In0.53Ga0.25Al0.22As base is fabricated. Experimentally, due to the elimination of the potential spike, a very low offset voltage of 50 mV is observed. Also, the studied device exhibits better breakdown characteristics and lower output conductance as compared with other InP/InGaAs or AlInAs/InGaAs HBTs. Furthermore, attributed to the enhancement of the hole confinement by an inserted δ-doped sheet at the emitter–base interface, a dramatic current gain about 4 is found even under an ultralow current operation regime (IC⩽5 nA).
ISSN:0003-6951
1077-3118
DOI:10.1063/1.124445