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Influence of target–substrate angle on the elemental concentration of c -axis YBa2Cu3O7−x thin films
The thermalization processes in sputtering suggest a spatial dependence of elemental concentration in the sputter plume. A variety of analysis techniques demonstrate that c-axis films grown at angles which deviate from the standard off-axis geometry produce nominally YBa2Cu3O7−x in the bulk with dra...
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Published in: | Applied physics letters 1999-09, Vol.75 (11), p.1589-1591 |
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Main Authors: | , |
Format: | Article |
Language: | English |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | The thermalization processes in sputtering suggest a spatial dependence of elemental concentration in the sputter plume. A variety of analysis techniques demonstrate that c-axis films grown at angles which deviate from the standard off-axis geometry produce nominally YBa2Cu3O7−x in the bulk with dramatic changes in the surface morphology and deposition rate. In addition to the common materials characterization techniques of scanning electron microscopy, x-ray diffraction, transport measurements, and conventional Rutherford backscattering spectrometry (RBS), angle-dependent RBS is employed to probe surface inhomogeneities of films grown at target–substrate angles away from the standard off-axis position. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.124763 |