Local charge trapping and detection of trapped charge by scanning capacitance microscope in the SiO2/Si system

Charge trapping induced by hot carriers in a metal–oxide–semiconductor capacitor was studied with a scanning capacitance microscope (SCM). The local charge trapping/detrapping and the readout of the trapped charge in SiO2 was performed using a SCM combined with an atomic force microscope. When apply...

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Bibliographic Details
Published in:Applied physics letters 1999-09, Vol.75 (12), p.1760-1762
Main Authors: Hong, J. W., Shin, S. M., Kang, C. J., Kuk, Y., Khim, Z. G., Park, Sang-il
Format: Article
Language:English
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Summary:Charge trapping induced by hot carriers in a metal–oxide–semiconductor capacitor was studied with a scanning capacitance microscope (SCM). The local charge trapping/detrapping and the readout of the trapped charge in SiO2 was performed using a SCM combined with an atomic force microscope. When applying a voltage between the conductive probe tip and the p-type silicon substrate, hot carriers injected from silicon substrate into the SiO2 generated a positive trapped charge in the 10-nm-thick SiO2 layer. The resulting shift in capacitance–voltage (C–V) curves due to the locally trapped charge was measured by the high-frequency C–V measurement. For an application to the ultrahigh density data storage field, we investigated how the charge trapping and detrapping characteristics depend on the writing speed and bias voltage.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.124811