Field-emission characteristics of SiC nanowires prepared by chemical-vapor deposition

Silicon carbide (SiC) nanowires on a silicon substrate were prepared using hot-filament-assisted chemical-vapor deposition with a solid silicon and carbon source. The SiC nanowires show good field-emitting properties as revealed by the current–voltage characteristics. Together with its ease of prepa...

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Bibliographic Details
Published in:Applied physics letters 1999-11, Vol.75 (19), p.2918-2920
Main Authors: Wong, K. W., Zhou, X. T., Au, Frederick C. K., Lai, H. L., Lee, C. S., Lee, S. T.
Format: Article
Language:English
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Summary:Silicon carbide (SiC) nanowires on a silicon substrate were prepared using hot-filament-assisted chemical-vapor deposition with a solid silicon and carbon source. The SiC nanowires show good field-emitting properties as revealed by the current–voltage characteristics. Together with its ease of preparation, these SiC nanowires are shown to have great potential in the area of electron field-emitting devices.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.125189