Impurity gettering by high-energy ion implantation in silicon beyond the projected range

Deep gettering layers have been formed in Si wafers by MeV implantation of Si+ and P+ ions, followed by annealing. Samples have been subsequently contaminated with Cu. Secondary ion mass spectrometry analysis reveals for P implants gettering of Cu atoms in regions significantly deeper than the proje...

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Bibliographic Details
Published in:Applied physics letters 1999-11, Vol.75 (22), p.3467-3469
Main Authors: Gueorguiev, Y. M., Kögler, R., Peeva, A., Panknin, D., Mücklich, A., Yankov, R. A., Skorupa, W.
Format: Article
Language:English
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Summary:Deep gettering layers have been formed in Si wafers by MeV implantation of Si+ and P+ ions, followed by annealing. Samples have been subsequently contaminated with Cu. Secondary ion mass spectrometry analysis reveals for P implants gettering of Cu atoms in regions significantly deeper than the projected ion range RP and formation of a separate Cu gettering band there. We call this phenomenon the “trans-RP effect.” The results obtained indicate the presence of an appreciable amount of defects in the region beyond RP. Their gettering ability is much higher than that of the implanted gettering layer at RP. The size of these deep defects is below the resolution limit of transmission electron microscopy. We suggest that they are interstitials and/or small interstitial clusters. An explanation of the mechanism responsible for their migration from RP into the trans-RP region and their clustering is proposed.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.125298