Heteroepitaxial electrodeposition of zinc oxide films on gallium nitride

Epitaxial zinc oxide films have been prepared on gallium nitride (0002) substrates by cathodic electrodeposition in an aqueous solution containing a zinc salt and dissolved oxygen at 85 °C. The films have the hexagonal structure with the c axis parallel to that of GaN and the [100] direction in ZnO...

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Bibliographic Details
Published in:Applied physics letters 1999-12, Vol.75 (24), p.3817-3819
Main Authors: Pauporté, Th, Lincot, D.
Format: Article
Language:English
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Summary:Epitaxial zinc oxide films have been prepared on gallium nitride (0002) substrates by cathodic electrodeposition in an aqueous solution containing a zinc salt and dissolved oxygen at 85 °C. The films have the hexagonal structure with the c axis parallel to that of GaN and the [100] direction in ZnO parallel to the [100] direction in GaN in the (0002) basal plane. The structural quality is attested by the values of the full width at half maximum in θ/2θ x-ray diffraction (XRD) diagrams [0.07° for the (0002) peak] and in five circles XRD diagrams [0.74° for the ZnO (101̄1) planes compared to 0.47° for the GaN (101̄1) planes]. The morphology of the layers has been studied by scanning electron microscopy. Before coalescence, arrays of epitaxial single crystalline hexagonal columns are observed with a low dispersion in size, indicating instantaneous tridimensional nucleation. Preliminary results on luminescence properties of the films before and after annealing are presented.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.125466