Growth of Si/3C–SiC/Si(100) heterostructures by pulsed supersonic free jets

• Published in: Applied physics letters 1999-12, Vol.75 (25), p.3977-3979
• Main Authors: Ikoma, Y., Endo, T., Watanabe, F., Motooka, T.
• Format: Article
• Language: English
• ISSN: 0003-6951; 1077-3118
• DOI: 10.1063/1.125512

We have investigated the epitaxial growth of multilayer structures of Si/3C–SiC/Si(100) by pulsed supersonic free jets of methylsilane (CH3SiH3) for SiC growth and trisilane (Si3H8) for Si growth. Epitaxial Si layers were obtained only on very thin (≈3 nm) 3C–SiC epitaxial layers, while polycrystalline Si was grown on thicker 3C–SiC layers. It was also found that the transition regions with a thickness of ≈1 nm existed at the interface between epitaxial 3C–SiC and Si layers by high-resolution transmission electron microscopy observation. These results suggest that the surface roughness and thickness of the 3C–SiC layer play an important role for epitaxial growth of Si.