Evidence of aluminum silicate formation during chemical vapor deposition of amorphous Al2O3 thin films on Si(100)

Using narrow nuclear reaction resonance profiling, aluminum profiles are obtained in ∼3.5 nm Al2O3 films deposited by low temperature (

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Bibliographic Details
Published in:Applied physics letters 1999-12, Vol.75 (25), p.4001-4003
Main Authors: Klein, T. M., Niu, D., Epling, W. S., Li, W., Maher, D. M., Hobbs, C. C., Hegde, R. I., Baumvol, I. J. R., Parsons, G. N.
Format: Article
Language:English
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Summary:Using narrow nuclear reaction resonance profiling, aluminum profiles are obtained in ∼3.5 nm Al2O3 films deposited by low temperature (
ISSN:0003-6951
1077-3118
DOI:10.1063/1.125519