Two-dimensional magnetic switching of micron-size films in magnetic tunnel junctions

The magnetic switching behavior of micron-size magnetic tunnel junctions has been studied in two-dimensional magnetic fields. By measuring junction resistance, we obtain information about the magnetization state of the free ferromagnetic layer. Magnetic properties of this layer are explored using th...

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Bibliographic Details
Published in:Applied physics letters 2000-01, Vol.76 (5), p.622-624
Main Authors: Anguelouch, A., Schrag, B. D., Xiao, Gang, Lu, Yu, Trouilloud, P. L., Wanner, R. A., Gallagher, W. J., Parkin, S. S. P.
Format: Article
Language:English
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Summary:The magnetic switching behavior of micron-size magnetic tunnel junctions has been studied in two-dimensional magnetic fields. By measuring junction resistance, we obtain information about the magnetization state of the free ferromagnetic layer. Magnetic properties of this layer are explored using the Stoner–Wohlfarth rotational model as a starting point. We use geometric parameters of the critical curves to obtain information about interlayer coupling and domain structure effects in the free layer.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.125838