High electron mobility AlGaN/GaN heterostructure on (111) Si

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Bibliographic Details
Published in:Applied physics letters 2000-02, Vol.76 (6), p.736-738
Main Authors: Schremer, A. T., Smart, J. A., Wang, Y., Ambacher, O., MacDonald, N. C., Shealy, J. R.
Format: Article
Language:English
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ISSN:0003-6951
1077-3118
DOI:10.1063/1.125878