High electron mobility AlGaN/GaN heterostructure on (111) Si

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Published in:Applied physics letters 2000-02, Vol.76 (6), p.736-738
Main Authors: Schremer, A. T., Smart, J. A., Wang, Y., Ambacher, O., MacDonald, N. C., Shealy, J. R.
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Language:English
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cited_by cdi_FETCH-LOGICAL-c223t-4db18e45b1fe7f25d3dd2cd184edb59c7f45148260f5e55910748105bd9d5ac53
cites cdi_FETCH-LOGICAL-c223t-4db18e45b1fe7f25d3dd2cd184edb59c7f45148260f5e55910748105bd9d5ac53
container_end_page 738
container_issue 6
container_start_page 736
container_title Applied physics letters
container_volume 76
creator Schremer, A. T.
Smart, J. A.
Wang, Y.
Ambacher, O.
MacDonald, N. C.
Shealy, J. R.
description
doi_str_mv 10.1063/1.125878
format article
fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_125878</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1063_1_125878</sourcerecordid><originalsourceid>FETCH-LOGICAL-c223t-4db18e45b1fe7f25d3dd2cd184edb59c7f45148260f5e55910748105bd9d5ac53</originalsourceid><addsrcrecordid>eNotj0FLAzEUhIMouFbBn7DHekibl-TtZi9CKdoKRQ_qOewmL3Zl60o2PfTm2Z_pL3GlHoZhYBi-YewaxAxEoeYwA4mmNCcsA1GWXAGYU5YJIRQvKoRzdjEM72NEqVTGbtft2zanjlyK_Ue-65u2a9MhX3Sr-nE-Kt9SotgPKe5d2kfKx9YUAG5-vr6f20t2FupuoKt_n7DX-7uX5ZpvnlYPy8WGOylV4to3YEhjA4HKINEr76XzYDT5BitXBo2gjSxEQEKsRnJtQGDjK4-1QzVh0-OuG1GGSMF-xnZXx4MFYf9-W7DH3-oXaN9JIg</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>High electron mobility AlGaN/GaN heterostructure on (111) Si</title><source>American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list)</source><source>American Institute of Physics</source><creator>Schremer, A. T. ; Smart, J. A. ; Wang, Y. ; Ambacher, O. ; MacDonald, N. C. ; Shealy, J. R.</creator><creatorcontrib>Schremer, A. T. ; Smart, J. A. ; Wang, Y. ; Ambacher, O. ; MacDonald, N. C. ; Shealy, J. R.</creatorcontrib><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.125878</identifier><language>eng</language><ispartof>Applied physics letters, 2000-02, Vol.76 (6), p.736-738</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c223t-4db18e45b1fe7f25d3dd2cd184edb59c7f45148260f5e55910748105bd9d5ac53</citedby><cites>FETCH-LOGICAL-c223t-4db18e45b1fe7f25d3dd2cd184edb59c7f45148260f5e55910748105bd9d5ac53</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,782,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Schremer, A. T.</creatorcontrib><creatorcontrib>Smart, J. A.</creatorcontrib><creatorcontrib>Wang, Y.</creatorcontrib><creatorcontrib>Ambacher, O.</creatorcontrib><creatorcontrib>MacDonald, N. C.</creatorcontrib><creatorcontrib>Shealy, J. R.</creatorcontrib><title>High electron mobility AlGaN/GaN heterostructure on (111) Si</title><title>Applied physics letters</title><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2000</creationdate><recordtype>article</recordtype><recordid>eNotj0FLAzEUhIMouFbBn7DHekibl-TtZi9CKdoKRQ_qOewmL3Zl60o2PfTm2Z_pL3GlHoZhYBi-YewaxAxEoeYwA4mmNCcsA1GWXAGYU5YJIRQvKoRzdjEM72NEqVTGbtft2zanjlyK_Ue-65u2a9MhX3Sr-nE-Kt9SotgPKe5d2kfKx9YUAG5-vr6f20t2FupuoKt_n7DX-7uX5ZpvnlYPy8WGOylV4to3YEhjA4HKINEr76XzYDT5BitXBo2gjSxEQEKsRnJtQGDjK4-1QzVh0-OuG1GGSMF-xnZXx4MFYf9-W7DH3-oXaN9JIg</recordid><startdate>20000207</startdate><enddate>20000207</enddate><creator>Schremer, A. T.</creator><creator>Smart, J. A.</creator><creator>Wang, Y.</creator><creator>Ambacher, O.</creator><creator>MacDonald, N. C.</creator><creator>Shealy, J. R.</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20000207</creationdate><title>High electron mobility AlGaN/GaN heterostructure on (111) Si</title><author>Schremer, A. T. ; Smart, J. A. ; Wang, Y. ; Ambacher, O. ; MacDonald, N. C. ; Shealy, J. R.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c223t-4db18e45b1fe7f25d3dd2cd184edb59c7f45148260f5e55910748105bd9d5ac53</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2000</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Schremer, A. T.</creatorcontrib><creatorcontrib>Smart, J. A.</creatorcontrib><creatorcontrib>Wang, Y.</creatorcontrib><creatorcontrib>Ambacher, O.</creatorcontrib><creatorcontrib>MacDonald, N. C.</creatorcontrib><creatorcontrib>Shealy, J. R.</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Schremer, A. T.</au><au>Smart, J. A.</au><au>Wang, Y.</au><au>Ambacher, O.</au><au>MacDonald, N. C.</au><au>Shealy, J. R.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>High electron mobility AlGaN/GaN heterostructure on (111) Si</atitle><jtitle>Applied physics letters</jtitle><date>2000-02-07</date><risdate>2000</risdate><volume>76</volume><issue>6</issue><spage>736</spage><epage>738</epage><pages>736-738</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><doi>10.1063/1.125878</doi><tpages>3</tpages></addata></record>
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title High electron mobility AlGaN/GaN heterostructure on (111) Si
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-29T05%3A50%3A51IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=High%20electron%20mobility%20AlGaN/GaN%20heterostructure%20on%20(111)%E2%80%8ASi&rft.jtitle=Applied%20physics%20letters&rft.au=Schremer,%20A.%20T.&rft.date=2000-02-07&rft.volume=76&rft.issue=6&rft.spage=736&rft.epage=738&rft.pages=736-738&rft.issn=0003-6951&rft.eissn=1077-3118&rft_id=info:doi/10.1063/1.125878&rft_dat=%3Ccrossref%3E10_1063_1_125878%3C/crossref%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c223t-4db18e45b1fe7f25d3dd2cd184edb59c7f45148260f5e55910748105bd9d5ac53%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true