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InGaN/GaN multi-quantum well distributed Bragg reflector laser diode

An electrically injected InGaN/GaN-based distributed Bragg reflector (DBR) laser was demonstrated. Surface grating was formed on both sides of ridge waveguide by chemically assisted ion beam etching technique. The observed threshold current was 375 mA with threshold voltage of 15.1 V for 500×3 μm2 d...

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Bibliographic Details
Published in:Applied physics letters 2000-03, Vol.76 (12), p.1489-1491
Main Authors: Cho, Jaehee, Cho, S., Kim, B. J., Chae, S., Sone, C., Nam, O. H., Lee, J. W., Park, Y., Kim, T. I.
Format: Article
Language:English
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Summary:An electrically injected InGaN/GaN-based distributed Bragg reflector (DBR) laser was demonstrated. Surface grating was formed on both sides of ridge waveguide by chemically assisted ion beam etching technique. The observed threshold current was 375 mA with threshold voltage of 15.1 V for 500×3 μm2 devices. The emission of the DBR laser occurred in a single longitudinal mode at a wavelength of 401.3 nm. The ratio of sidemode suppression was found to be more than 13 dB until a current injection of 1 A.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.126072