Heterogeneously integrated organic light-emitting diodes with complementary metal–oxide–silicon circuitry

Top-emitting arrays of organic light-emitting diodes (OLEDs) have been fabricated and demonstrated on complementary metal–oxide–silicon (CMOS) circuitry. The 8×8 array of OLEDs is composed of 90 μm micropixels with a 55 μm separation. The OLEDs are based on an emitting layer of tris-(8-hydroxyquinol...

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Bibliographic Details
Published in:Applied physics letters 2000-06, Vol.76 (26), p.3849-3851
Main Authors: Mathine, D. L., Woo, H. S., He, W., Kim, T. W., Kippelen, B., Peyghambarian, N.
Format: Article
Language:English
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Summary:Top-emitting arrays of organic light-emitting diodes (OLEDs) have been fabricated and demonstrated on complementary metal–oxide–silicon (CMOS) circuitry. The 8×8 array of OLEDs is composed of 90 μm micropixels with a 55 μm separation. The OLEDs are based on an emitting layer of tris-(8-hydroxyquinoline)aluminum (Alq3) doped with coumarin 6 to provide green light emission. A layer of N,N′-diphenyl-N, N′-bis(3-methylphenyl)1-1′-biphenyl 1-4, 4′-diamine (TPD) was used as a hole transport layer and poly(ethylenedioxythiophene) doped with polystyrenesulfonate was used as a buffer layer between the TPD and the CMOS anode metal. Bright light was emitted through a semitransparent Mg:Ag cathode when the micropixel was driven by an individual current source.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.126798