High ε gate dielectrics Gd2O3 and Y2O3 for silicon

• Published in: Applied physics letters 2000-07, Vol.77 (1), p.130-132
• Main Authors: Kwo, J., Hong, M., Kortan, A. R., Queeney, K. T., Chabal, Y. J., Mannaerts, J. P., Boone, T., Krajewski, J. J., Sergent, A. M., Rosamilia, J. M.
• Format: Article
• Language: English
• ISSN: 0003-6951; 1077-3118
• DOI: 10.1063/1.126899

We report on growth and characterization of both epitaxial and amorphous films Gd2O3 of (ε=14) and Y2O3(ε=18) as the gate dielectrics for Si prepared by ultrahigh vacuum vapor deposition. The use of vicinal Si (100) substrates is key to the growth of (110) oriented, single-domain films in the Mn2O3 structure. Typical electrical leakage results are 10−3 A/cm2 at 1 V for single domain epitaxial Gd2O3 and Y2O3 films with an equivalent SiO2 thickness, teq of 15 Å, and 10−6 A/cm2 at 1 V for smooth amorphous Y2O3 films (ε=18) with a teq of only 10 Å. For all the Gd2O3 films, the absence of SiO2 segregation at the interface is established from infrared absorption measurements.