A technique to form a porous silicon layer with no backside contact by alternating current electrochemical process

We report here the formation of porous silicon under alternating current conditions. Instead of applying the usual direct current electrochemical process, an alternating current was applied with a given frequency and peak voltage. The porous silicon layer properties are equivalent to the properties...

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Bibliographic Details
Published in:Applied physics letters 2000-07, Vol.77 (2), p.208-210
Main Authors: El-Bahar, A., Nemirovsky, Y.
Format: Article
Language:English
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Summary:We report here the formation of porous silicon under alternating current conditions. Instead of applying the usual direct current electrochemical process, an alternating current was applied with a given frequency and peak voltage. The porous silicon layer properties are equivalent to the properties that would be achieved by the standard direct current formation technique (i.e., same porosity level). The main advantages of this process are: (a) The alternating current formed porous silicon exhibits higher mechanical stability during the drying step than layers formed using the standard direct current technique. (b) The alternating current process can be performed without a deposited backside contact. These simplify the process and permit its integration with high temperature processing steps and clean furnaces of a modern very large sale-integrated technology.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.126926