Contribution of ions to the growth of amorphous, polymorphous, and microcrystalline silicon thin films

• Published in: Journal of applied physics 2000-09, Vol.88 (6), p.3674-3688
• Main Authors: Hamers, E. A. G., Fontcuberta i Morral, A., Niikura, C., Brenot, R., Roca i Cabarrocas, P.
• Format: Article
• Language: English
• ISSN: 0021-8979; 1089-7550
• DOI: 10.1063/1.1289523

The growth of amorphous, microcrystalline, and polymorphous silicon has been investigated by studying the species contributing to the growth and resulting film structure. The surface reaction probability of the radicals and the contribution of ions to the growth have been determined. In a-Si:H deposition by hot wire chemical vapor deposition, the surface reaction probability (β=0.29) of the depositing radical is compatible with SiH3, whereas the surface reaction probability in microcrystalline silicon growth is higher (0.36⩽β⩽0.54). On the contrary, the deposition of amorphous silicon by plasma enhanced chemical vapor deposition indicates the contribution of more reactive radicals than SiH3. The deposition of polymorphous and microcrystalline silicon by plasma is dominated by ions, which can contribute up to 70% of the deposited film. This is attributed to efficient ionization of silane in charge exchange reactions with hydrogen ions. The surface reaction probability in the case of polymorphous silicon deposition (β≈0.30) is intermediate between that of a-Si:H deposition (β≈0.40) and that of microcrystalline silicon deposition (β≈0.20). Etching of amorphous silicon by means of a hydrogen plasma shows that ions may hinder the process.