Loading…

Contribution of ions to the growth of amorphous, polymorphous, and microcrystalline silicon thin films

The growth of amorphous, microcrystalline, and polymorphous silicon has been investigated by studying the species contributing to the growth and resulting film structure. The surface reaction probability of the radicals and the contribution of ions to the growth have been determined. In a-Si:H depos...

Full description

Saved in:
Bibliographic Details
Published in:Journal of applied physics 2000-09, Vol.88 (6), p.3674-3688
Main Authors: Hamers, E. A. G., Fontcuberta i Morral, A., Niikura, C., Brenot, R., Roca i Cabarrocas, P.
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by cdi_FETCH-LOGICAL-c293t-94cc1e0271637b94a9725f6ff6e3ff709c5edb936cd4614a4ebddcd32b1db0cc3
cites cdi_FETCH-LOGICAL-c293t-94cc1e0271637b94a9725f6ff6e3ff709c5edb936cd4614a4ebddcd32b1db0cc3
container_end_page 3688
container_issue 6
container_start_page 3674
container_title Journal of applied physics
container_volume 88
creator Hamers, E. A. G.
Fontcuberta i Morral, A.
Niikura, C.
Brenot, R.
Roca i Cabarrocas, P.
description The growth of amorphous, microcrystalline, and polymorphous silicon has been investigated by studying the species contributing to the growth and resulting film structure. The surface reaction probability of the radicals and the contribution of ions to the growth have been determined. In a-Si:H deposition by hot wire chemical vapor deposition, the surface reaction probability (β=0.29) of the depositing radical is compatible with SiH3, whereas the surface reaction probability in microcrystalline silicon growth is higher (0.36⩽β⩽0.54). On the contrary, the deposition of amorphous silicon by plasma enhanced chemical vapor deposition indicates the contribution of more reactive radicals than SiH3. The deposition of polymorphous and microcrystalline silicon by plasma is dominated by ions, which can contribute up to 70% of the deposited film. This is attributed to efficient ionization of silane in charge exchange reactions with hydrogen ions. The surface reaction probability in the case of polymorphous silicon deposition (β≈0.30) is intermediate between that of a-Si:H deposition (β≈0.40) and that of microcrystalline silicon deposition (β≈0.20). Etching of amorphous silicon by means of a hydrogen plasma shows that ions may hinder the process.
doi_str_mv 10.1063/1.1289523
format article
fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_1289523</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1063_1_1289523</sourcerecordid><originalsourceid>FETCH-LOGICAL-c293t-94cc1e0271637b94a9725f6ff6e3ff709c5edb936cd4614a4ebddcd32b1db0cc3</originalsourceid><addsrcrecordid>eNpFkEtLxDAYRYMoWEcX_oNsBTvmS9qmWUrxBQNudF3ytJG2KUkGmX9vBwdcXe5dHC4HoVsgWyANe4At0FbUlJ2hAkgrSl7X5BwVhFAoW8HFJbpK6ZsQgJaJArkuzDl6tc8-zDg4vEbCOeA8WPwVw08ejqucQlyGsE_3eAnj4b_J2eDJ6xh0PKQsx9HPFic_er3i8uBn7Pw4pWt04eSY7M0pN-jz-emjey137y9v3eOu1FSwXIpKa7CEcmgYV6KSgtPaNc41ljnHidC1NUqwRpuqgUpWVhmjDaMKjCJasw26--Ouj1KK1vVL9JOMhx5IfxTUQ38SxH4BQnda9w</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Contribution of ions to the growth of amorphous, polymorphous, and microcrystalline silicon thin films</title><source>American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list)</source><creator>Hamers, E. A. G. ; Fontcuberta i Morral, A. ; Niikura, C. ; Brenot, R. ; Roca i Cabarrocas, P.</creator><creatorcontrib>Hamers, E. A. G. ; Fontcuberta i Morral, A. ; Niikura, C. ; Brenot, R. ; Roca i Cabarrocas, P.</creatorcontrib><description>The growth of amorphous, microcrystalline, and polymorphous silicon has been investigated by studying the species contributing to the growth and resulting film structure. The surface reaction probability of the radicals and the contribution of ions to the growth have been determined. In a-Si:H deposition by hot wire chemical vapor deposition, the surface reaction probability (β=0.29) of the depositing radical is compatible with SiH3, whereas the surface reaction probability in microcrystalline silicon growth is higher (0.36⩽β⩽0.54). On the contrary, the deposition of amorphous silicon by plasma enhanced chemical vapor deposition indicates the contribution of more reactive radicals than SiH3. The deposition of polymorphous and microcrystalline silicon by plasma is dominated by ions, which can contribute up to 70% of the deposited film. This is attributed to efficient ionization of silane in charge exchange reactions with hydrogen ions. The surface reaction probability in the case of polymorphous silicon deposition (β≈0.30) is intermediate between that of a-Si:H deposition (β≈0.40) and that of microcrystalline silicon deposition (β≈0.20). Etching of amorphous silicon by means of a hydrogen plasma shows that ions may hinder the process.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.1289523</identifier><language>eng</language><ispartof>Journal of applied physics, 2000-09, Vol.88 (6), p.3674-3688</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c293t-94cc1e0271637b94a9725f6ff6e3ff709c5edb936cd4614a4ebddcd32b1db0cc3</citedby><cites>FETCH-LOGICAL-c293t-94cc1e0271637b94a9725f6ff6e3ff709c5edb936cd4614a4ebddcd32b1db0cc3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Hamers, E. A. G.</creatorcontrib><creatorcontrib>Fontcuberta i Morral, A.</creatorcontrib><creatorcontrib>Niikura, C.</creatorcontrib><creatorcontrib>Brenot, R.</creatorcontrib><creatorcontrib>Roca i Cabarrocas, P.</creatorcontrib><title>Contribution of ions to the growth of amorphous, polymorphous, and microcrystalline silicon thin films</title><title>Journal of applied physics</title><description>The growth of amorphous, microcrystalline, and polymorphous silicon has been investigated by studying the species contributing to the growth and resulting film structure. The surface reaction probability of the radicals and the contribution of ions to the growth have been determined. In a-Si:H deposition by hot wire chemical vapor deposition, the surface reaction probability (β=0.29) of the depositing radical is compatible with SiH3, whereas the surface reaction probability in microcrystalline silicon growth is higher (0.36⩽β⩽0.54). On the contrary, the deposition of amorphous silicon by plasma enhanced chemical vapor deposition indicates the contribution of more reactive radicals than SiH3. The deposition of polymorphous and microcrystalline silicon by plasma is dominated by ions, which can contribute up to 70% of the deposited film. This is attributed to efficient ionization of silane in charge exchange reactions with hydrogen ions. The surface reaction probability in the case of polymorphous silicon deposition (β≈0.30) is intermediate between that of a-Si:H deposition (β≈0.40) and that of microcrystalline silicon deposition (β≈0.20). Etching of amorphous silicon by means of a hydrogen plasma shows that ions may hinder the process.</description><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2000</creationdate><recordtype>article</recordtype><recordid>eNpFkEtLxDAYRYMoWEcX_oNsBTvmS9qmWUrxBQNudF3ytJG2KUkGmX9vBwdcXe5dHC4HoVsgWyANe4At0FbUlJ2hAkgrSl7X5BwVhFAoW8HFJbpK6ZsQgJaJArkuzDl6tc8-zDg4vEbCOeA8WPwVw08ejqucQlyGsE_3eAnj4b_J2eDJ6xh0PKQsx9HPFic_er3i8uBn7Pw4pWt04eSY7M0pN-jz-emjey137y9v3eOu1FSwXIpKa7CEcmgYV6KSgtPaNc41ljnHidC1NUqwRpuqgUpWVhmjDaMKjCJasw26--Ouj1KK1vVL9JOMhx5IfxTUQ38SxH4BQnda9w</recordid><startdate>20000915</startdate><enddate>20000915</enddate><creator>Hamers, E. A. G.</creator><creator>Fontcuberta i Morral, A.</creator><creator>Niikura, C.</creator><creator>Brenot, R.</creator><creator>Roca i Cabarrocas, P.</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20000915</creationdate><title>Contribution of ions to the growth of amorphous, polymorphous, and microcrystalline silicon thin films</title><author>Hamers, E. A. G. ; Fontcuberta i Morral, A. ; Niikura, C. ; Brenot, R. ; Roca i Cabarrocas, P.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c293t-94cc1e0271637b94a9725f6ff6e3ff709c5edb936cd4614a4ebddcd32b1db0cc3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2000</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Hamers, E. A. G.</creatorcontrib><creatorcontrib>Fontcuberta i Morral, A.</creatorcontrib><creatorcontrib>Niikura, C.</creatorcontrib><creatorcontrib>Brenot, R.</creatorcontrib><creatorcontrib>Roca i Cabarrocas, P.</creatorcontrib><collection>CrossRef</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Hamers, E. A. G.</au><au>Fontcuberta i Morral, A.</au><au>Niikura, C.</au><au>Brenot, R.</au><au>Roca i Cabarrocas, P.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Contribution of ions to the growth of amorphous, polymorphous, and microcrystalline silicon thin films</atitle><jtitle>Journal of applied physics</jtitle><date>2000-09-15</date><risdate>2000</risdate><volume>88</volume><issue>6</issue><spage>3674</spage><epage>3688</epage><pages>3674-3688</pages><issn>0021-8979</issn><eissn>1089-7550</eissn><abstract>The growth of amorphous, microcrystalline, and polymorphous silicon has been investigated by studying the species contributing to the growth and resulting film structure. The surface reaction probability of the radicals and the contribution of ions to the growth have been determined. In a-Si:H deposition by hot wire chemical vapor deposition, the surface reaction probability (β=0.29) of the depositing radical is compatible with SiH3, whereas the surface reaction probability in microcrystalline silicon growth is higher (0.36⩽β⩽0.54). On the contrary, the deposition of amorphous silicon by plasma enhanced chemical vapor deposition indicates the contribution of more reactive radicals than SiH3. The deposition of polymorphous and microcrystalline silicon by plasma is dominated by ions, which can contribute up to 70% of the deposited film. This is attributed to efficient ionization of silane in charge exchange reactions with hydrogen ions. The surface reaction probability in the case of polymorphous silicon deposition (β≈0.30) is intermediate between that of a-Si:H deposition (β≈0.40) and that of microcrystalline silicon deposition (β≈0.20). Etching of amorphous silicon by means of a hydrogen plasma shows that ions may hinder the process.</abstract><doi>10.1063/1.1289523</doi><tpages>15</tpages></addata></record>
fulltext fulltext
identifier ISSN: 0021-8979
ispartof Journal of applied physics, 2000-09, Vol.88 (6), p.3674-3688
issn 0021-8979
1089-7550
language eng
recordid cdi_crossref_primary_10_1063_1_1289523
source American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list)
title Contribution of ions to the growth of amorphous, polymorphous, and microcrystalline silicon thin films
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-24T12%3A47%3A43IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Contribution%20of%20ions%20to%20the%20growth%20of%20amorphous,%20polymorphous,%20and%20microcrystalline%20silicon%20thin%20films&rft.jtitle=Journal%20of%20applied%20physics&rft.au=Hamers,%20E.%20A.%20G.&rft.date=2000-09-15&rft.volume=88&rft.issue=6&rft.spage=3674&rft.epage=3688&rft.pages=3674-3688&rft.issn=0021-8979&rft.eissn=1089-7550&rft_id=info:doi/10.1063/1.1289523&rft_dat=%3Ccrossref%3E10_1063_1_1289523%3C/crossref%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c293t-94cc1e0271637b94a9725f6ff6e3ff709c5edb936cd4614a4ebddcd32b1db0cc3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true