Structural and luminescence properties of nanostructured ZnS:Mn

We have studied structural and luminescence properties of nanostructured (NS-) ZnS:Mn which has potential applications in thin-film electroluminescence (TFEL) devices. As a NS-ZnS:Mn system, a ZnS:Mn/Si3N4 multilayer having thicknesses of 2.5 nm for ZnS and 0.6 nm for Si3N4 was prepared by a convent...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 2000-08, Vol.77 (9), p.1301-1303
Main Authors: Adachi, Daisuke, Hasui, Shigeki, Toyama, Toshihiko, Okamoto, Hiroaki
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We have studied structural and luminescence properties of nanostructured (NS-) ZnS:Mn which has potential applications in thin-film electroluminescence (TFEL) devices. As a NS-ZnS:Mn system, a ZnS:Mn/Si3N4 multilayer having thicknesses of 2.5 nm for ZnS and 0.6 nm for Si3N4 was prepared by a conventional rf-magnetron sputtering method. Grazing incidence x-ray reflectometry and x-ray diffractometry show that ZnS:Mn nanocrystals were formed between the amorphous Si3N4 layers. Photoluminescence intensity associated with the Mn2+ transitions per total thickness of the ZnS:Mn layers is increased in NS-ZnS:Mn in comparison with that of the ZnS:Mn thin film, indicating the effects due to quantum confinement. The TFEL device with NS-ZnS:Mn as an emission layer exhibits a reddish-orange broad band emission with the maximum luminance of 2.8 cd/m2 under the 1-kHz sinusoidal wave operation at a voltage of 20.5 V0−p.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1290274