Electrical characteristics of 25 nm Pr(ZrTi)O3 thin films grown on Si by metalorganic chemical vapor deposition

Pb(Zr 0.5 Ti 0.5 )O 3 thin films 25 nm in thickness were grown on LaNiO3/Pt/Ti buffered Si substrates at 600 °C by metalorganic chemical vapor deposition. P–E studies showed a remanent polarization value of 8 μC/cm2 with a coercive field of 200 kV/cm. In polarization fatigue studies, these films onl...

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Bibliographic Details
Published in:Journal of applied physics 2000-08, Vol.88 (4), p.2157-2159
Main Authors: Lin, C. H., Friddle, P. A., Lu, X., Chen, Haydn, Kim, Young, Wu, T. B.
Format: Article
Language:English
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Summary:Pb(Zr 0.5 Ti 0.5 )O 3 thin films 25 nm in thickness were grown on LaNiO3/Pt/Ti buffered Si substrates at 600 °C by metalorganic chemical vapor deposition. P–E studies showed a remanent polarization value of 8 μC/cm2 with a coercive field of 200 kV/cm. In polarization fatigue studies, these films only showed slight degradation in remanent polarization up to 4×108 cycles (±3 V oscillation) before breakdown. Moreover, the effect of space charge on the C–V behavior of these films was illustrated I–V characteristics of these films were also described.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.1305824