Determination of the band offset and the characteristic interdiffusion length in quantum-well lasers using a capacitance–voltage technique

In this work, a capacitance–voltage (C–V) technique, based on a combination of measured and simulated C–V characteristics, was applied to characterize In0.35Ga0.65As/GaAs multiquantum-well laser structures at room temperature. A theoretical model, including the self-consistent solution of Poisson an...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 2000-08, Vol.77 (6), p.776-778
Main Authors: Arias, J., Esquivias, I., Larkins, E. C., Bürkner, S., Weisser, S., Rosenzweig, J.
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by cdi_FETCH-LOGICAL-c227t-92fd2630b01790ba5f47fd7bdfe7d7fb3e6b94e34d0ee57c25ea8145a8b02e173
cites cdi_FETCH-LOGICAL-c227t-92fd2630b01790ba5f47fd7bdfe7d7fb3e6b94e34d0ee57c25ea8145a8b02e173
container_end_page 778
container_issue 6
container_start_page 776
container_title Applied physics letters
container_volume 77
creator Arias, J.
Esquivias, I.
Larkins, E. C.
Bürkner, S.
Weisser, S.
Rosenzweig, J.
description In this work, a capacitance–voltage (C–V) technique, based on a combination of measured and simulated C–V characteristics, was applied to characterize In0.35Ga0.65As/GaAs multiquantum-well laser structures at room temperature. A theoretical model, including the self-consistent solution of Poisson and Schrödinger equations, was developed to simulate the C–V characteristics and the carrier concentration profiles. Measured C–V carrier concentration profiles were used to obtain the average impurity concentration in active regions. The comparison between experimental and simulated results was used to determine the conduction band offset, yielding ΔEc/ΔEg≈0.8. In the case of samples with postgrowth quantum-well intermixing, this technique was applied to extract the characteristic interdiffusion length.
doi_str_mv 10.1063/1.1306660
format article
fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_1306660</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1063_1_1306660</sourcerecordid><originalsourceid>FETCH-LOGICAL-c227t-92fd2630b01790ba5f47fd7bdfe7d7fb3e6b94e34d0ee57c25ea8145a8b02e173</originalsourceid><addsrcrecordid>eNotkL1OwzAUhS0EEqUw8AZeGVL8k9jNiMqvVIkF5ujGuW6MUqe1HRAbD8DGG_IkJKLT-c7RuXc4hFxytuBMyWu-4JIppdgRmXGmdSY5Xx6TGWNMZqos-Ck5i_FttIWQcka-bzFh2DoPyfWe9pamFmkNvhnZRkx0wikzLQQwY9nF5Ax1fsTGWTvE6bBDv0ntmNL9AD4N2-wDu452EDFEOnb8hgI1sAPjEniDv18_732XYIM0oWm92w94Tk4sdBEvDjonr_d3L6vHbP388LS6WWdGCJ2yUthGKMlqxnXJaihsrm2j68aibrStJaq6zFHmDUMstBEFwpLnBSxrJpBrOSdX_39N6GMMaKtdcFsInxVn1TRjxavDjPIPXgtpug</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Determination of the band offset and the characteristic interdiffusion length in quantum-well lasers using a capacitance–voltage technique</title><source>American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list)</source><source>American Institute of Physics</source><creator>Arias, J. ; Esquivias, I. ; Larkins, E. C. ; Bürkner, S. ; Weisser, S. ; Rosenzweig, J.</creator><creatorcontrib>Arias, J. ; Esquivias, I. ; Larkins, E. C. ; Bürkner, S. ; Weisser, S. ; Rosenzweig, J.</creatorcontrib><description>In this work, a capacitance–voltage (C–V) technique, based on a combination of measured and simulated C–V characteristics, was applied to characterize In0.35Ga0.65As/GaAs multiquantum-well laser structures at room temperature. A theoretical model, including the self-consistent solution of Poisson and Schrödinger equations, was developed to simulate the C–V characteristics and the carrier concentration profiles. Measured C–V carrier concentration profiles were used to obtain the average impurity concentration in active regions. The comparison between experimental and simulated results was used to determine the conduction band offset, yielding ΔEc/ΔEg≈0.8. In the case of samples with postgrowth quantum-well intermixing, this technique was applied to extract the characteristic interdiffusion length.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.1306660</identifier><language>eng</language><ispartof>Applied physics letters, 2000-08, Vol.77 (6), p.776-778</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c227t-92fd2630b01790ba5f47fd7bdfe7d7fb3e6b94e34d0ee57c25ea8145a8b02e173</citedby><cites>FETCH-LOGICAL-c227t-92fd2630b01790ba5f47fd7bdfe7d7fb3e6b94e34d0ee57c25ea8145a8b02e173</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,782,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Arias, J.</creatorcontrib><creatorcontrib>Esquivias, I.</creatorcontrib><creatorcontrib>Larkins, E. C.</creatorcontrib><creatorcontrib>Bürkner, S.</creatorcontrib><creatorcontrib>Weisser, S.</creatorcontrib><creatorcontrib>Rosenzweig, J.</creatorcontrib><title>Determination of the band offset and the characteristic interdiffusion length in quantum-well lasers using a capacitance–voltage technique</title><title>Applied physics letters</title><description>In this work, a capacitance–voltage (C–V) technique, based on a combination of measured and simulated C–V characteristics, was applied to characterize In0.35Ga0.65As/GaAs multiquantum-well laser structures at room temperature. A theoretical model, including the self-consistent solution of Poisson and Schrödinger equations, was developed to simulate the C–V characteristics and the carrier concentration profiles. Measured C–V carrier concentration profiles were used to obtain the average impurity concentration in active regions. The comparison between experimental and simulated results was used to determine the conduction band offset, yielding ΔEc/ΔEg≈0.8. In the case of samples with postgrowth quantum-well intermixing, this technique was applied to extract the characteristic interdiffusion length.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2000</creationdate><recordtype>article</recordtype><recordid>eNotkL1OwzAUhS0EEqUw8AZeGVL8k9jNiMqvVIkF5ujGuW6MUqe1HRAbD8DGG_IkJKLT-c7RuXc4hFxytuBMyWu-4JIppdgRmXGmdSY5Xx6TGWNMZqos-Ck5i_FttIWQcka-bzFh2DoPyfWe9pamFmkNvhnZRkx0wikzLQQwY9nF5Ax1fsTGWTvE6bBDv0ntmNL9AD4N2-wDu452EDFEOnb8hgI1sAPjEniDv18_732XYIM0oWm92w94Tk4sdBEvDjonr_d3L6vHbP388LS6WWdGCJ2yUthGKMlqxnXJaihsrm2j68aibrStJaq6zFHmDUMstBEFwpLnBSxrJpBrOSdX_39N6GMMaKtdcFsInxVn1TRjxavDjPIPXgtpug</recordid><startdate>20000807</startdate><enddate>20000807</enddate><creator>Arias, J.</creator><creator>Esquivias, I.</creator><creator>Larkins, E. C.</creator><creator>Bürkner, S.</creator><creator>Weisser, S.</creator><creator>Rosenzweig, J.</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20000807</creationdate><title>Determination of the band offset and the characteristic interdiffusion length in quantum-well lasers using a capacitance–voltage technique</title><author>Arias, J. ; Esquivias, I. ; Larkins, E. C. ; Bürkner, S. ; Weisser, S. ; Rosenzweig, J.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c227t-92fd2630b01790ba5f47fd7bdfe7d7fb3e6b94e34d0ee57c25ea8145a8b02e173</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2000</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Arias, J.</creatorcontrib><creatorcontrib>Esquivias, I.</creatorcontrib><creatorcontrib>Larkins, E. C.</creatorcontrib><creatorcontrib>Bürkner, S.</creatorcontrib><creatorcontrib>Weisser, S.</creatorcontrib><creatorcontrib>Rosenzweig, J.</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Arias, J.</au><au>Esquivias, I.</au><au>Larkins, E. C.</au><au>Bürkner, S.</au><au>Weisser, S.</au><au>Rosenzweig, J.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Determination of the band offset and the characteristic interdiffusion length in quantum-well lasers using a capacitance–voltage technique</atitle><jtitle>Applied physics letters</jtitle><date>2000-08-07</date><risdate>2000</risdate><volume>77</volume><issue>6</issue><spage>776</spage><epage>778</epage><pages>776-778</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>In this work, a capacitance–voltage (C–V) technique, based on a combination of measured and simulated C–V characteristics, was applied to characterize In0.35Ga0.65As/GaAs multiquantum-well laser structures at room temperature. A theoretical model, including the self-consistent solution of Poisson and Schrödinger equations, was developed to simulate the C–V characteristics and the carrier concentration profiles. Measured C–V carrier concentration profiles were used to obtain the average impurity concentration in active regions. The comparison between experimental and simulated results was used to determine the conduction band offset, yielding ΔEc/ΔEg≈0.8. In the case of samples with postgrowth quantum-well intermixing, this technique was applied to extract the characteristic interdiffusion length.</abstract><doi>10.1063/1.1306660</doi><tpages>3</tpages></addata></record>
fulltext fulltext
identifier ISSN: 0003-6951
ispartof Applied physics letters, 2000-08, Vol.77 (6), p.776-778
issn 0003-6951
1077-3118
language eng
recordid cdi_crossref_primary_10_1063_1_1306660
source American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list); American Institute of Physics
title Determination of the band offset and the characteristic interdiffusion length in quantum-well lasers using a capacitance–voltage technique
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-30T23%3A09%3A30IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Determination%20of%20the%20band%20offset%20and%20the%20characteristic%20interdiffusion%20length%20in%20quantum-well%20lasers%20using%20a%20capacitance%E2%80%93voltage%20technique&rft.jtitle=Applied%20physics%20letters&rft.au=Arias,%20J.&rft.date=2000-08-07&rft.volume=77&rft.issue=6&rft.spage=776&rft.epage=778&rft.pages=776-778&rft.issn=0003-6951&rft.eissn=1077-3118&rft_id=info:doi/10.1063/1.1306660&rft_dat=%3Ccrossref%3E10_1063_1_1306660%3C/crossref%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c227t-92fd2630b01790ba5f47fd7bdfe7d7fb3e6b94e34d0ee57c25ea8145a8b02e173%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true