Dependence of the critical thickness on Si doping of InGaAs on GaAs

The formation of misfit dislocations during the initial stages of relaxation of In0.04Ga0.96As epitaxial layers on (001) GaAs has been studied by in situ high-resolution double crystal x-ray topography during molecular beam epitaxy growth. Relaxation is initially anisotropic with the fast B(g) dislo...

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Published in:Applied physics letters 2000-10, Vol.77 (14), p.2156-2158
Main Authors: Tanner, B. K., Parbrook, P. J., Whitehouse, C. R., Keir, A. M., Johnson, A. D., Jones, J., Wallis, D., Smith, L. M., Lunn, B., Hogg, J. H. C.
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cited_by cdi_FETCH-LOGICAL-c293t-9eeacc7489aa256edf723673e42207a1df98675044ae4f9538d1c08aa51747613
cites cdi_FETCH-LOGICAL-c293t-9eeacc7489aa256edf723673e42207a1df98675044ae4f9538d1c08aa51747613
container_end_page 2158
container_issue 14
container_start_page 2156
container_title Applied physics letters
container_volume 77
creator Tanner, B. K.
Parbrook, P. J.
Whitehouse, C. R.
Keir, A. M.
Johnson, A. D.
Jones, J.
Wallis, D.
Smith, L. M.
Lunn, B.
Hogg, J. H. C.
description The formation of misfit dislocations during the initial stages of relaxation of In0.04Ga0.96As epitaxial layers on (001) GaAs has been studied by in situ high-resolution double crystal x-ray topography during molecular beam epitaxy growth. Relaxation is initially anisotropic with the fast B(g) dislocations being nucleated before the slow A(g) set. On doping with Si up to a maximum concentration of 4×1018 atoms/cm3, an increase in critical thickness was observed for both dislocation sets. The data can be fitted to an extension of the Matthews–Blakeslee model that includes a lattice friction force varying linearly with the dopant concentration.
doi_str_mv 10.1063/1.1315342
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fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_1315342</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1063_1_1315342</sourcerecordid><originalsourceid>FETCH-LOGICAL-c293t-9eeacc7489aa256edf723673e42207a1df98675044ae4f9538d1c08aa51747613</originalsourceid><addsrcrecordid>eNotjz1PwzAURS0EEqEw8A-8MqT4-fkjHqsApVIlBmCOLOcZDMWJ4i78exra6epcXV3pMHYLYgnC4D0sAUGjkmesAmFtjQDNOauEEFgbp-GSXZXydUAtESvWPtBIuacciA-R7z-JhyntU_C7A6TwnakUPmT-mng_jCl_zLNNXvvVfz3nNbuIflfo5pQL9v70-NY-19uX9aZdbesgHe5rR-RDsKpx3kttqI9WorFISkphPfTRNcZqoZQnFZ3GpocgGu81WGUN4ILdHX_DNJQyUezGKf346bcD0c32HXQne_wD-3NJ9Q</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Dependence of the critical thickness on Si doping of InGaAs on GaAs</title><source>American Institute of Physics (AIP) Publications</source><source>American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list)</source><creator>Tanner, B. K. ; Parbrook, P. J. ; Whitehouse, C. R. ; Keir, A. M. ; Johnson, A. D. ; Jones, J. ; Wallis, D. ; Smith, L. M. ; Lunn, B. ; Hogg, J. H. C.</creator><creatorcontrib>Tanner, B. K. ; Parbrook, P. J. ; Whitehouse, C. R. ; Keir, A. M. ; Johnson, A. D. ; Jones, J. ; Wallis, D. ; Smith, L. M. ; Lunn, B. ; Hogg, J. H. C.</creatorcontrib><description>The formation of misfit dislocations during the initial stages of relaxation of In0.04Ga0.96As epitaxial layers on (001) GaAs has been studied by in situ high-resolution double crystal x-ray topography during molecular beam epitaxy growth. Relaxation is initially anisotropic with the fast B(g) dislocations being nucleated before the slow A(g) set. On doping with Si up to a maximum concentration of 4×1018 atoms/cm3, an increase in critical thickness was observed for both dislocation sets. The data can be fitted to an extension of the Matthews–Blakeslee model that includes a lattice friction force varying linearly with the dopant concentration.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.1315342</identifier><language>eng</language><ispartof>Applied physics letters, 2000-10, Vol.77 (14), p.2156-2158</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c293t-9eeacc7489aa256edf723673e42207a1df98675044ae4f9538d1c08aa51747613</citedby><cites>FETCH-LOGICAL-c293t-9eeacc7489aa256edf723673e42207a1df98675044ae4f9538d1c08aa51747613</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,782,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Tanner, B. K.</creatorcontrib><creatorcontrib>Parbrook, P. J.</creatorcontrib><creatorcontrib>Whitehouse, C. R.</creatorcontrib><creatorcontrib>Keir, A. M.</creatorcontrib><creatorcontrib>Johnson, A. D.</creatorcontrib><creatorcontrib>Jones, J.</creatorcontrib><creatorcontrib>Wallis, D.</creatorcontrib><creatorcontrib>Smith, L. M.</creatorcontrib><creatorcontrib>Lunn, B.</creatorcontrib><creatorcontrib>Hogg, J. H. C.</creatorcontrib><title>Dependence of the critical thickness on Si doping of InGaAs on GaAs</title><title>Applied physics letters</title><description>The formation of misfit dislocations during the initial stages of relaxation of In0.04Ga0.96As epitaxial layers on (001) GaAs has been studied by in situ high-resolution double crystal x-ray topography during molecular beam epitaxy growth. Relaxation is initially anisotropic with the fast B(g) dislocations being nucleated before the slow A(g) set. On doping with Si up to a maximum concentration of 4×1018 atoms/cm3, an increase in critical thickness was observed for both dislocation sets. The data can be fitted to an extension of the Matthews–Blakeslee model that includes a lattice friction force varying linearly with the dopant concentration.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2000</creationdate><recordtype>article</recordtype><recordid>eNotjz1PwzAURS0EEqEw8A-8MqT4-fkjHqsApVIlBmCOLOcZDMWJ4i78exra6epcXV3pMHYLYgnC4D0sAUGjkmesAmFtjQDNOauEEFgbp-GSXZXydUAtESvWPtBIuacciA-R7z-JhyntU_C7A6TwnakUPmT-mng_jCl_zLNNXvvVfz3nNbuIflfo5pQL9v70-NY-19uX9aZdbesgHe5rR-RDsKpx3kttqI9WorFISkphPfTRNcZqoZQnFZ3GpocgGu81WGUN4ILdHX_DNJQyUezGKf346bcD0c32HXQne_wD-3NJ9Q</recordid><startdate>20001002</startdate><enddate>20001002</enddate><creator>Tanner, B. K.</creator><creator>Parbrook, P. J.</creator><creator>Whitehouse, C. R.</creator><creator>Keir, A. M.</creator><creator>Johnson, A. D.</creator><creator>Jones, J.</creator><creator>Wallis, D.</creator><creator>Smith, L. M.</creator><creator>Lunn, B.</creator><creator>Hogg, J. H. C.</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20001002</creationdate><title>Dependence of the critical thickness on Si doping of InGaAs on GaAs</title><author>Tanner, B. K. ; Parbrook, P. J. ; Whitehouse, C. R. ; Keir, A. M. ; Johnson, A. D. ; Jones, J. ; Wallis, D. ; Smith, L. M. ; Lunn, B. ; Hogg, J. H. C.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c293t-9eeacc7489aa256edf723673e42207a1df98675044ae4f9538d1c08aa51747613</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2000</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Tanner, B. K.</creatorcontrib><creatorcontrib>Parbrook, P. J.</creatorcontrib><creatorcontrib>Whitehouse, C. R.</creatorcontrib><creatorcontrib>Keir, A. M.</creatorcontrib><creatorcontrib>Johnson, A. D.</creatorcontrib><creatorcontrib>Jones, J.</creatorcontrib><creatorcontrib>Wallis, D.</creatorcontrib><creatorcontrib>Smith, L. M.</creatorcontrib><creatorcontrib>Lunn, B.</creatorcontrib><creatorcontrib>Hogg, J. H. C.</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Tanner, B. K.</au><au>Parbrook, P. J.</au><au>Whitehouse, C. R.</au><au>Keir, A. M.</au><au>Johnson, A. D.</au><au>Jones, J.</au><au>Wallis, D.</au><au>Smith, L. M.</au><au>Lunn, B.</au><au>Hogg, J. H. C.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Dependence of the critical thickness on Si doping of InGaAs on GaAs</atitle><jtitle>Applied physics letters</jtitle><date>2000-10-02</date><risdate>2000</risdate><volume>77</volume><issue>14</issue><spage>2156</spage><epage>2158</epage><pages>2156-2158</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>The formation of misfit dislocations during the initial stages of relaxation of In0.04Ga0.96As epitaxial layers on (001) GaAs has been studied by in situ high-resolution double crystal x-ray topography during molecular beam epitaxy growth. Relaxation is initially anisotropic with the fast B(g) dislocations being nucleated before the slow A(g) set. On doping with Si up to a maximum concentration of 4×1018 atoms/cm3, an increase in critical thickness was observed for both dislocation sets. The data can be fitted to an extension of the Matthews–Blakeslee model that includes a lattice friction force varying linearly with the dopant concentration.</abstract><doi>10.1063/1.1315342</doi><tpages>3</tpages></addata></record>
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title Dependence of the critical thickness on Si doping of InGaAs on GaAs
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-01T22%3A05%3A19IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Dependence%20of%20the%20critical%20thickness%20on%20Si%20doping%20of%20InGaAs%20on%20GaAs&rft.jtitle=Applied%20physics%20letters&rft.au=Tanner,%20B.%20K.&rft.date=2000-10-02&rft.volume=77&rft.issue=14&rft.spage=2156&rft.epage=2158&rft.pages=2156-2158&rft.issn=0003-6951&rft.eissn=1077-3118&rft_id=info:doi/10.1063/1.1315342&rft_dat=%3Ccrossref%3E10_1063_1_1315342%3C/crossref%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c293t-9eeacc7489aa256edf723673e42207a1df98675044ae4f9538d1c08aa51747613%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true