Comparison of nitrogen incorporation in molecular-beam epitaxy of GaAsN, GaInAsN, and GaAsSbN

The incorporation of nitrogen in the low percentage range is investigated in a different III–V compound matrix. The materials are grown by molecular-beam epitaxy with a nitrogen radio-frequency plasma source. For equivalent growth conditions, the same rate of N incorporation is found for GaAsN and G...

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Bibliographic Details
Published in:Applied physics letters 2000-10, Vol.77 (16), p.2482-2484
Main Authors: Harmand, J. C., Ungaro, G., Largeau, L., Le Roux, G.
Format: Article
Language:English
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Summary:The incorporation of nitrogen in the low percentage range is investigated in a different III–V compound matrix. The materials are grown by molecular-beam epitaxy with a nitrogen radio-frequency plasma source. For equivalent growth conditions, the same rate of N incorporation is found for GaAsN and GaInAsN. However, this N incorporation rate is significantly enhanced in the GaAsSbN alloy. These observations support a discussion on the reactive nitrogen species.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1318228