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Capacitance–voltage and admittance spectroscopy of self-assembled Ge islands in Si

We investigate the electrical properties of self-assembled Ge islands embedded in Si Schottky diode structures by means of capacitance–voltage measurements and admittance spectroscopy. The Ge islands form at T=550 °C by self-assembly in the Stranski–Krastanow growth mode with an area density of 4.5×...

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Bibliographic Details
Published in:Applied physics letters 2000-10, Vol.77 (17), p.2704-2706
Main Authors: Miesner, C., Asperger, T., Brunner, K., Abstreiter, G.
Format: Article
Language:English
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Summary:We investigate the electrical properties of self-assembled Ge islands embedded in Si Schottky diode structures by means of capacitance–voltage measurements and admittance spectroscopy. The Ge islands form at T=550 °C by self-assembly in the Stranski–Krastanow growth mode with an area density of 4.5×109 cm−2. Their diameter and height are 70 and 6.5 nm, respectively. A linear increase of the thermal activation energy observed in voltage-dependent admittance spectroscopy shows that the ensemble of Ge islands has a low, continuous, averaged density of states.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1320036