Annihilation of nonradiative defects on hydrogenated silicon surfaces under pulsed-laser irradiation

Annihilation of nonradiative recombination defects on hydrogenated Si surfaces has been found after irradiation with XeCl laser pulses of energies below the melting threshold. A decrease of the total numbers of the stretched Si–Hx (x=1,2,3) bonds and an increase of the relative part of the Si–H bond...

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Bibliographic Details
Published in:Applied physics letters 2000-11, Vol.77 (19), p.3006-3008
Main Authors: Timoshenko, V. Yu, Dittrich, Th, Koch, F., Kamenev, B. V., Rappich, J.
Format: Article
Language:English
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Summary:Annihilation of nonradiative recombination defects on hydrogenated Si surfaces has been found after irradiation with XeCl laser pulses of energies below the melting threshold. A decrease of the total numbers of the stretched Si–Hx (x=1,2,3) bonds and an increase of the relative part of the Si–H bonds of the surface coverage have been established simultaneously by Fourier transform infrared spectroscopy. The drop of the number of surface nonradiative defects despite the efficient hydrogen desorption is explained by the mechanism of bonding of Si dangling bonds under the high electronic excitation induced by the XeCl laser pulse.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1324723